Study on thermal stability of thin CoSi2 film

被引：0
|
作者：
Gu, ZG
Chu, PK
Liu, J
Jiang, GB
Ru, GP
Li, BZ
机构：
来源：
THIN FILMS - STRUCTURE AND MORPHOLOGY | 1997年 / 441卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thermal stability of thin CoSi2 films formed from four layered structures: Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si has been studied using four-point-probe (FPP), TEM and RBS/channeling. It is found that thermal instability can be influenced by the polycrystalline structure in CoSi2. Growing epitaxial CoSi2 film on Si (100) using TiN capping and Ti interfacial layers can improve the thermal stability of thin CoSi2 film.
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页码：273 / 276
页数：4
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