Γ-X electron level crossover in ZnSe/BeTe multiple quantum wells -: art. no. 113307

被引：2
|
作者：
Toropov, AA [1 ]
Nekrutkina, OV
Nestoklon, MO
Sorokin, SV
Solnyshkov, DD
Ivanov, SV
Waag, A
Landwehr, G
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany
[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.67.113307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the photoluminescence (PL) properties of thin BeTe/ZnSe/BeTe type II quantum wells (QW's), where the Gamma electron level in ZnSe is close to the resonance with the X electron level in BeTe. The Gamma-X levels crossover modifies the nature of the interband optical transitions which are indirect in real space but direct in k space for the thick enough QW's and direct in real space but indirect in k space for the QW's thinner than 2-3 monolayers. Approaching the crossover condition from the side of thicker QW's leads to a thresholdlike quenching and spectral narrowing of the PL band. The latter effect can be explained taking into account the inhomogeneous broadening of the Gamma electron level.
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页数：4
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