Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells -: art. no. 121308

In0.3Ga0.7N/GaN multiple quantum wells have been grown on the epitaxial lateral overgrowth GaN successfully. The samples have been characterized by transmission electron microscopy and x-ray diffraction, which show the high quality of the samples. Photoluminescence measurements have been carried out at room temperature, with back scattering geometry. At a low excitation power, only exciton-related emission has been observed at 3.1935 eV. With increasing excitation power, a peak appears at the low-energy side of the exciton-related emission, and becomes dominant at high excitation power. This peak has been assigned to plasma emission, because the intensity of this peak increases with excitation power as I-ex(1.9).