High performance 0.2 mu m CMOS with 25 angstrom gate oxide grown on nitrogen implanted Si substrates

被引：36
|
作者：
Liu, CT
Lloyd, EJ
Ma, Y
Du, M
Opila, RL
Hillenius, SJ
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.553849
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：499 / 502
页数：4
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