Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement

被引：0

作者：

Tabuchi, M ^{[1
]}

Hisadome, S ^{[1
]}

Katou, D ^{[1
]}

Yoshikane, T ^{[1
]}

Urakami, A ^{[1
]}

Inoue, K ^{[1
]}

Koizumi, A ^{[1
]}

Fujiwara, Y ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/GaInP/GaAs structures grown by organometallic vapor phase epitaxy with various growth-temperature sequences were investigated using X-ray crystal truncation rod scattering measurement. When the GaAs/GaInP/GaAs. structure was grown at 540degreesC, the structure was well defined as intended. On the other hand, when the growth temperature of the GaAs layer on GaInP was 580degreesC, In atoms significantly distributed in the GaAs layers, and when the growth temperature of the GaInP layer was 580degreesC, the peak In composition of the GaInP layer was lower than designed value. However, the structure was not affected so much by the growth temperature of the GaAs layer under the GaInP layer.

引用

页码：534 / 537

页数：4

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