X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

被引：1
|
作者：
Mogilyanski, D [1 ]
Blumin, M
Gartstein, E
Opitz, R
Kohler, R
机构：
[1] Ben Gurion Univ Negev, Inst Appl Res, POB 653, IL-84105 Beer Sheva, Israel
[2] Paul Drude Inst Festkorperelekt, DE-10117 Berlin, Germany
来源：
EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2 | 2000年 / 321-3卷
关键词：
AlAs/GaAs superlattice; vicinal substrate; X-ray diffraction; specular reflectivity and high resolution intensity mapping;
D O I：
10.4028/www.scientific.net/MSF.321-324.445
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle theta:2 theta scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.
引用
收藏
页码：445 / 450
页数：6
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