X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

被引：1
|
作者：
Mogilyanski, D [1 ]
Blumin, M
Gartstein, E
Opitz, R
Kohler, R
机构：
[1] Ben Gurion Univ Negev, Inst Appl Res, POB 653, IL-84105 Beer Sheva, Israel
[2] Paul Drude Inst Festkorperelekt, DE-10117 Berlin, Germany
来源：
EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2 | 2000年 / 321-3卷
关键词：
AlAs/GaAs superlattice; vicinal substrate; X-ray diffraction; specular reflectivity and high resolution intensity mapping;
D O I：
10.4028/www.scientific.net/MSF.321-324.445
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle theta:2 theta scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.
引用
收藏
页码：445 / 450
页数：6
相关论文
共 50 条
  • [41] STRUCTURAL CHARACTERIZATION OF AN (INAS)8(ALAS)2 SUPERLATTICE ON GAAS(001) WITH A FOUR-CIRCLE X-RAY DIFFRACTOMETER
    FAYOS, J
    MENDEZ, MP
    THIN SOLID FILMS, 1990, 189 (02) : 329 - 338
  • [42] X-RAY CHARACTERIZATION OF HETEROEPITAXIAL GAAS ON SI (001)
    ZABEL, H
    LUCAS, N
    MORKOC, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
  • [43] CHARACTERIZATION OF HETEROEPITAXIAL ZNSE GROWN BY MBE ON GAAS, ALAS AND INGAAS
    SKROMME, BJ
    TAMARGO, MC
    TURCO, FS
    SHIBLI, SM
    BONNER, WA
    NAHORY, RE
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 205 - 210
  • [44] X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY
    ABRAMOF, E
    HINGERL, K
    PESEK, A
    SITTER, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) : A80 - A82
  • [45] CHARACTERIZATION OF HETEROEPITAXIAL ZNSE GROWN BY MBE ON GAAS, ALAS AND INGAAS
    SKROMME, BJ
    TAMARGO, MC
    TURCO, FS
    SHIBLI, SM
    BONNER, WA
    NAHORY, RE
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 205 - 210
  • [46] X-ray detector with thick epitaxial GaAs grown by chemical reaction
    Sun, GC
    Lenoir, A
    Bréelle, E
    Sainic, H
    Bourgoin, JC
    El-Abbassi, H
    Sellin, PJ
    Montagne, JP
    2002 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-3, 2003, : 362 - 365
  • [47] Microstructural aspects of island nucleation process in elastically relaxed LPOMVPE grown In0.2Ga0.8As/GaAs multilayer
    Mogilyanski, D
    Gartstein, E
    Blumin, M
    Fekete, D
    Kohler, R
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (10A) : A19 - A24
  • [48] Angular dependence of Al-2p X-ray yield spectra of GaAs/AlAs/GaAs heterostructures
    Inoue, K
    Agui, A
    Shin, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 : 572 - 575
  • [49] X-ray detector with thick epitaxial GaAs grown by chemical reaction
    Sun, GC
    Lenoir, M
    Bréelle, E
    Samic, H
    Bourgoin, JC
    El-Abbassi, H
    Sellin, PJ
    Montagne, JP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (04) : 1036 - 1038
  • [50] Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs
    O'Donnell, CB
    Lacey, G
    Horsburgh, G
    Cullis, AG
    Whitehouse, CR
    Parbrook, PJ
    Meredith, W
    Galbraith, I
    Mock, P
    Prior, KA
    Cavenett, BC
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 95 - 99
12345