Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

被引：2

作者：

Ma, Jingyi ^{[1
]}

Tong, Ling ^{[1
]}

Guo, Xiaojiao ^{[1
]}

Chen, Xinyu ^{[1
]}

Zhang, Minxing ^{[1
]}

Wu, Chenjian ^{[2
]}

Bao, Wenzhong ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Sch Microelect, Shanghai 200433, Peoples R China

[2] Soochow Univ, Sch Elect Informat, Suzhou 215006, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

中国国家自然科学基金;

关键词：

MoS2; different metal gates and inverter; CIRCUITS;

D O I：

10.1109/EDTM50988.2021.9420915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.

引用

页数：3

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