Schottky barrier height at the Au/porous silicon interface

被引：1

作者：

Ke, ML

Matthai, CC

Pavlov, A

Laiho, R

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

[2] Univ Turku, Wihuri Phys Lab, SF-20500 Turku, Finland

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00488-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Schottky barrier height at the Au/porous silicon interface has been studied with ballistic electron emission microscopy (BEEM). The porous silicon thin films were prepared by laser ablation, The barrier height was found to display considerable variation across the interface. We suggest that this barrier height variation is a reflection of the local bonding differences at the Au/porous Si interface. (C) 1998 Elsevier Science B.V.

引用

页码：454 / 457

页数：4

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