Study of moisture effects on Ti/porous silicon/silicon Schottky barrier

被引：0
|
作者：
Strikha, V. [1 ]
Skryshevsky, V. [2 ]
Polishchuk, V. [2 ]
Souteyrand, E. [2 ]
Martin, J.R. [2 ]
机构：
[1] Radiophysics Department, Kiev National Shevchenko University, Kiev, Ukraine
[2] IFOS-Grp. 'Physchim. des Interfaces', Ecole Centrale de Lyon, Ecully, France
来源：
Journal of Porous Materials | 2000年 / 7卷 / 01期
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页码：111 / 114
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