Study of moisture effects on Ti/porous silicon/silicon Schottky barrier

被引：0

作者：

Strikha, V. ^{[1
]}

Skryshevsky, V. ^{[2
]}

Polishchuk, V. ^{[2
]}

Souteyrand, E. ^{[2
]}

Martin, J.R. ^{[2
]}

机构：

[1] Radiophysics Department, Kiev National Shevchenko University, Kiev, Ukraine

[2] IFOS-Grp. 'Physchim. des Interfaces', Ecole Centrale de Lyon, Ecully, France

来源：

Journal of Porous Materials | 2000年 / 7卷 / 01期

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D O I：

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摘要：

引用

页码：111 / 114

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