Residual stresses in silicon and their evolution upon heat treatment and irradiation

被引：1
|
作者：
Matyash, I. E. [1 ]
Minailova, I. A. [1 ]
Serdega, B. K. [1 ]
Khirunenko, L. I. [2 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 09期
关键词：
DEFECTS FORMATION; OXYGEN;
D O I：
10.1134/S1063782617090147
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450A degrees C on the stresses are studied. The stresses are measured by a method based on the detection of birefringence by modulation polarimetry. It is shown that tin-doped silicon includes stripes of point defects with a nonuniform distribution of residual stresses of up to 20 kg cm(-2). Heat treatment at 450A degrees C induces an increase in the residual stresses in the sample to 50 kg cm(-2). It is established that the radiation defects formed upon the irradiation of tin-doped silicon reduce the residual stresses to 2-3 kg cm(-2).
引用
收藏
页码：1107 / 1110
页数：4
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