Sulfur passivation for photosensitivity control of detectors with corrugated metal III-V semiconductors interface

被引:0
|
作者
Dmitruk, NL [1 ]
Mayeva, OI [1 ]
Mamikin, SV [1 ]
Yastrubchak, OB [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-252650 Kyiv, Ukraine
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on sulfur bared surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity me used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in surface plasmon polaritons excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating.
引用
收藏
页码:263 / 266
页数:4
相关论文
共 50 条
  • [31] Diluted magnetic III-V semiconductors
    Twardowski, A
    ACTA PHYSICA POLONICA A, 2000, 98 (03) : 203 - 216
  • [32] Reactivity and control of III-V surfaces for passivation and Schottky barrier formation
    Bruno, G
    APPLIED SURFACE SCIENCE, 2004, 235 (03) : 239 - 248
  • [33] OXIDATION MECHANISM OF III-V SEMICONDUCTORS
    BARTELS, F
    MONCH, W
    VACUUM, 1990, 41 (1-3) : 667 - 668
  • [34] ANION INCLUSIONS IN III-V SEMICONDUCTORS
    GANT, H
    KOENDERS, L
    BARTELS, F
    MONCH, W
    APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1032 - 1034
  • [35] Keeping up with III-V semiconductors
    CartsPowell, Y
    LASER FOCUS WORLD, 1997, 33 (05): : 114 - 115
  • [36] PHOTOCONDUCTIVE SWITCHING IN III-V SEMICONDUCTORS
    DEXIU, H
    ELLIOTT, RA
    JOHNSON, JC
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1982, 72 (12) : 1806 - 1806
  • [37] Wet etching of III-V semiconductors
    Gomes, WP
    PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295
  • [38] Perspective on III-V barrier detectors
    Klipstein, Philip C.
    APPLIED PHYSICS LETTERS, 2022, 120 (06)
  • [39] ANALYSIS OF HYDROGEN IN III-V SEMICONDUCTORS
    GAUNEAU, M
    CHAPLAIN, R
    SALVI, M
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 116 - 117
  • [40] DREAMS AND EXPECTATIONS OF III-V SEMICONDUCTORS
    NAKAJIMA, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 1 - 8