Sulfur passivation for photosensitivity control of detectors with corrugated metal III-V semiconductors interface

被引：0
|
作者：
Dmitruk, NL [1 ]
Mayeva, OI [1 ]
Mamikin, SV [1 ]
Yastrubchak, OB [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-252650 Kyiv, Ukraine
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on sulfur bared surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity me used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in surface plasmon polaritons excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating.
引用
收藏
页码：263 / 266
页数：4
相关论文
共 50 条
  • [21] Pores in III-V semiconductors
    Föll, H
    Langa, S
    Carstensen, J
    Christophersen, M
    Tiginyanu, IM
    ADVANCED MATERIALS, 2003, 15 (03) : 183 - +
  • [22] Microwave III-V semiconductors for telecommunications and prospective of the III-V industry
    Wu, CS
    PROCEEDING OF THE 2002 3RD INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2002, : 223 - 223
  • [23] Investigation of Sulfur Passivation Treatments for Direct Wafer Bonding of III-V Materials
    Jackson, Michael J.
    Jackson, Biyun L.
    Goorsky, Mark S.
    SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 375 - 382
  • [24] Controlling the interface between II-VI and III-V semiconductors
    Zahn, Dietrich R.T.
    Advanced Materials for Optics and Electronics, 1994, 3 (1-6): : 3 - 9
  • [25] PASSIVATION OF APPARATUSES WITH III-V MATERIALS
    ALNOT, P
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 51 - 56
  • [26] Passivation of III-V Nanowires for Optoelectronics
    LaPierre, R. R.
    Chia, A. C. E.
    Haapamaki, C. M.
    Tajik, N.
    Li, Y.
    Zhao, S.
    Mi, Z.
    NANOSCALE LUMINESCENT MATERIALS 2, 2012, 45 (05): : 51 - 60
  • [27] APPLICATIONS OF SCANNING AUGER MICROSCOPY FOR INTERFACE STUDIES IN III-V SEMICONDUCTORS
    BRESSE, JF
    SCANNING ELECTRON MICROSCOPY, 1985, 1985 : 1465 - 1476
  • [28] Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS
    Merckling, C.
    Penaud, J.
    Kohen, D.
    Bellenger, F.
    Alian, A.
    Brammertz, G.
    El-Kazzi, M.
    Houssa, M.
    Dekoster, J.
    Caymax, M.
    Meuris, M.
    Heyns, M. M.
    MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1592 - 1595
  • [29] Investigation of new chemistries for processing and passivation of III-V antimonide based infrared detectors
    Baril, Neil
    Zuo, Daniel
    Sidor, Daniel
    Pinkie, Benjamin
    Brown, Alexander
    Almeida, Leo A.
    Bandara, Sumith
    INFRARED PHYSICS & TECHNOLOGY, 2018, 94 : 267 - 272
  • [30] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
    FULLER, CS
    ALLISON, HW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880
12345