The effect of traps on the performance of graphene field-effect transistors

被引：15
|
作者：
Zhu, J. [1 ]
Jhaveri, R. [1 ]
Woo, J. C. S. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期
关键词：
field effect transistors; graphene; EPITAXIAL GRAPHENE; LARGE-AREA; DEVICE; FILMS;
D O I：
10.1063/1.3428785
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428785]
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Terahertz Laser Combs in Graphene Field-Effect Transistors
    Cosme, Pedro
    Tercas, Hugo
    ACS PHOTONICS, 2020, 7 (06): : 1375 - 1381
  • [42] Semianalytical quantum model for graphene field-effect transistors
    20184806149859
    1600, American Institute of Physics Inc. (116):
  • [43] Charge carrier velocity in graphene field-effect transistors
    Bonmann, Marlene
    Vorobiev, Andrei
    Andersson, Michael A.
    Stake, Jan
    APPLIED PHYSICS LETTERS, 2017, 111 (23)
  • [44] Hybrid graphene/organic semiconductor field-effect transistors
    Ha, Tae-Jun
    Akinwande, Deji
    Dodabalapur, Ananth
    APPLIED PHYSICS LETTERS, 2012, 101 (03)
  • [45] Ambipolar to Unipolar Conversion in Graphene Field-Effect Transistors
    Li, Hong
    Zhang, Qing
    Liu, Chao
    Xu, Shouheng
    Gao, Pingqi
    ACS NANO, 2011, 5 (04) : 3198 - 3203
  • [46] Graphene-on-Silicon Hybrid Field-Effect Transistors
    Fomin, Mykola
    Pasadas, Francisco.
    Marin, Enrique G.
    Medina-Rull, Alberto
    Ruiz, Francisco. G.
    Godoy, Andres.
    Zadorozhnyi, Ihor
    Beltramo, Guillermo
    Brings, Fabian
    Vitusevich, Svetlana
    Offenhaeusser, Andreas
    Kireev, Dmitry
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (05)
  • [47] Unipolar to ambipolar conversion in graphene field-effect transistors
    Feng, Tingting
    Xie, Dan
    Lin, Yuxuan
    Tian, He
    Zhao, Haiming
    Ren, Tianling
    Zhu, Hongwei
    APPLIED PHYSICS LETTERS, 2012, 101 (25)
  • [48] Contact length scaling in graphene field-effect transistors
    Xu, Haitao
    Wang, Sheng
    Zhang, Zhiyong
    Wang, Zhenxing
    Xu, Huilong
    Peng, Lian-Mao
    APPLIED PHYSICS LETTERS, 2012, 100 (10)
  • [49] Electrical and Noise Characteristics of Graphene Field-Effect Transistors
    Shur, M.
    Rumyantsev, S.
    Liu, G.
    Balandin, A. A.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 145 - 149
  • [50] Fabrication of SWCNT-Graphene Field-Effect Transistors
    Xie, Shuangxi
    Jiao, Niandong
    Tung, Steve
    Liu, Lianqing
    MICROMACHINES, 2015, 6 (09): : 1317 - 1330
12345