The effect of traps on the performance of graphene field-effect transistors

被引：15
|
作者：
Zhu, J. [1 ]
Jhaveri, R. [1 ]
Woo, J. C. S. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期
关键词：
field effect transistors; graphene; EPITAXIAL GRAPHENE; LARGE-AREA; DEVICE; FILMS;
D O I：
10.1063/1.3428785
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428785]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Valley-based field-effect transistors in graphene
    Lee, M. -K.
    Lue, N. -Y.
    Wen, C. -K.
    Wu, G. Y.
    PHYSICAL REVIEW B, 2012, 86 (16)
  • [32] Graphene-Graphite Oxide Field-Effect Transistors
    Standley, Brian
    Mendez, Anthony
    Schmidgall, Emma
    Bockrath, Marc
    NANO LETTERS, 2012, 12 (03) : 1165 - 1169
  • [33] Epitaxial graphene field-effect transistors on silicon substrates
    Kang, Hyun-Chul
    Karasawa, Hiromi
    Miyamoto, Yu
    Handa, Hiroyuki
    Suemitsu, Tetsuya
    Suemitsu, Maki
    Otsuji, Taiichi
    SOLID-STATE ELECTRONICS, 2010, 54 (09) : 1010 - 1014
  • [34] Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
    Hwang, Jongseung
    Kim, Heetae
    Lee, Jaehyun
    Whang, Dongmok
    Hwang, Sungwoo
    IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05): : 826 - 829
  • [35] Demonstration of Complementary Ternary Graphene Field-Effect Transistors
    Yun Ji Kim
    So-Young Kim
    Jinwoo Noh
    Chang Hoo Shim
    Ukjin Jung
    Sang Kyung Lee
    Kyoung Eun Chang
    Chunhum Cho
    Byoung Hun Lee
    Scientific Reports, 6
  • [36] Current Mirrors Based on Graphene Field-effect Transistors
    Peng, Pei
    Tian, Zhongzhen
    Li, Muchan
    Wang, Zidong
    Reng, Liming
    Fu, Yunyi
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 281 - 283
  • [37] Electronic spin drift in graphene field-effect transistors
    Jozsa, C.
    Popinciuc, M.
    Tombros, N.
    Jonkman, H. T.
    van Wees, B. J.
    PHYSICAL REVIEW LETTERS, 2008, 100 (23)
  • [38] A Parameter Extraction Methodology for Graphene Field-Effect Transistors
    Jeppson, Kjell
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (03) : 1393 - 1400
  • [39] A review for compact model of graphene field-effect transistors
    Lu, Nianduan
    Wang, Lingfei
    Li, Ling
    Liu, Ming
    CHINESE PHYSICS B, 2017, 26 (03)
  • [40] Carrier scattering in graphene nanoribbon field-effect transistors
    Ouyang, Yijian
    Wang, Xinran
    Dai, Hongjie
    Guo, Jing
    APPLIED PHYSICS LETTERS, 2008, 92 (24)
12345