Silicon nano-crystal memories: Devices in the limit of conventional miniaturization

被引:0
|
作者
Tiwari, S [1 ]
机构
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源
PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 | 1996年 / 96卷 / 01期
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Single transistor memory structure, with changes in threshold voltage exceeding approximate to 0.25 V corresponding to single electron storage in individual nano-crystals, operating in the sub-3 V range, and exhibiting long term to non-volatile charge storage are reported, The structures avail the confinement and direct tunneling effects that take place at small dimensions - in silicon and in silicon dioxide. As a consequence of Coulombic effects, operation at 77 K shows a saturation in threshold voltage in a range of gate voltages with steps in the threshold voltage corresponding to single and multiple electron storage. The plateauing of threshold shift, operation at ultra-low power, low voltages, and single element implementation utilizing current sensing makes this an alternative memory at speeds lower than of DRAMs and higher than those of (EPROMs)-P-2, but with potential for significantly higher density, lower power, and faster read.
引用
收藏
页码:250 / 259
页数:10
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