Controlled threshold low power nano-crystal memory

被引:0
|
作者
Hanafi, H.I.
Tiwari, S.
机构
来源
| 1995年
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] The p-channel Si nano-crystal memory
    Shin, H
    Kim, I
    Han, K
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 200 - 204
  • [2] Fast and long retention-time nano-crystal memory
    Hanafi, HI
    Tiwari, S
    Khan, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1553 - 1558
  • [3] Characteristics of p-channel Si nano-crystal memory
    Han, K
    Kim, I
    Shin, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 874 - 879
  • [4] Characteristics of p-channel Si nano-crystal memory
    Han, K
    Kim, I
    Shin, H
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 309 - 312
  • [5] A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications
    张君宇
    王永
    刘璟
    张满红
    许中广
    霍宗亮
    刘明
    半导体学报, 2012, 33 (08) : 67 - 70
  • [6] Electrical characteristics of nano-crystal Si particles for nano floating gate memory
    Yang, Jin Seok
    Kim, Seong-Il
    Kim, Yong Tae
    Cho, Woon Jo
    Park, Jung Ho
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 628 - +
  • [7] Electrical Properties of Multilayer Silicon Nano-crystal Nonvolatile Memory
    Zhang, Zhigang
    Wang, Liudi
    Mao, Ping
    Pan, Liyang
    Xu, Jun
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 962 - 965
  • [8] Electrical characteristics of nano-crystal Si particles for nano-floating gate memory
    Yang, Jin Seok
    Kim, Seong-Il
    Kim, Yong Tae
    Cho, Woon Jo
    Park, Jung Ho
    MICROELECTRONICS JOURNAL, 2008, 39 (12) : 1553 - 1555
  • [9] Programming characteristics of P-channel Si nano-crystal memory
    Han, K
    Kim, I
    Shin, H
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) : 313 - 315
  • [10] Room temperature single electron effects in a Si nano-crystal memory
    Kim, I
    Han, S
    Han, K
    Lee, J
    Shin, H
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) : 630 - 631