Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

被引：2

作者：

Kudrawiec, R. ^{[1
]}

Gladysiewicz, M. ^{[1
]}

Misiewicz, J. ^{[1
]}

Korpijarvi, V-M ^{[2
]}

Pakarinen, J. ^{[2
,3
]}

Puustinen, J. ^{[2
]}

Laukkanen, P. ^{[2
]}

Laakso, A. ^{[2
]}

Guina, M. ^{[2
]}

Dumitrescu, M. ^{[2
]}

Pessa, M. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[3] VTT Tech Res Ctr Finland, Espoo 02044, Finland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

LAYERS;

D O I：

10.1063/1.3462299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462299]

引用

页数：3

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