Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

被引：2

作者：

Kudrawiec, R. ^{[1
]}

Gladysiewicz, M. ^{[1
]}

Misiewicz, J. ^{[1
]}

Korpijarvi, V-M ^{[2
]}

Pakarinen, J. ^{[2
,3
]}

Puustinen, J. ^{[2
]}

Laukkanen, P. ^{[2
]}

Laakso, A. ^{[2
]}

Guina, M. ^{[2
]}

Dumitrescu, M. ^{[2
]}

Pessa, M. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[3] VTT Tech Res Ctr Finland, Espoo 02044, Finland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

LAYERS;

D O I：

10.1063/1.3462299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462299]

引用

页数：3

共 50 条

[21] PHOTOLUMINESCENCE AND ELECTROREFLECTANCE STUDIES OF MODULATION-DOPED PSEUDOMORPHIC ALGAAS/INGAAS/GAAS QUANTUM-WELLS
DODABALAPUR, A
KESAN, VP
NEIKIRK, DP
STREETMAN, BG
HERMAN, MH
WARD, ID
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) : 265 - 270
[22] Photoreflectance and photoluminescence study of step-like Gain NAs/GaInNAs/GaAs quantum wells
Kudrawiec, R
Motyka, M
Andrzejewski, J
Misiewicz, J
Gollub, D
Forchel, A
IEE PROCEEDINGS-OPTOELECTRONICS, 2004, 151 (05): : 313 - 316
[23] Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32%
Kudrawiec, R.
Yuen, H. B.
Motyka, M.
Gladysiewicz, M.
Misiewicz, J.
Bank, S. R.
Bae, H. P.
Wistey, M. A.
Harris, James S.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
[24] Electronic band structures of GaInNAs/GaAs compressive strained quantum wells
Fan, WJ
Yoon, SF
JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 843 - 847
[25] Theoretical Studies of the Influence of Temperature on Photoluminescence Dynamics in GaInNAs/GaAs Quantum Wells
Baranowski, Michal
Kudrawiec, Robert
Misiewicz, Jan
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[26] Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
Sun, Z.
Xu, Z. Y.
Yang, X. D.
Sun, B. Q.
Ji, Y.
Zhang, S. Y.
Ni, H. Q.
Niu, Z. C.
ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS X, 2006, 6118
[27] Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
Sun, Z
Xu, ZY
Yang, XD
Sun, BQ
Ji, Y
Zhang, SY
Ni, HQ
Niu, ZC
APPLIED PHYSICS LETTERS, 2006, 88 (01)
[28] Optical and terahertz characterization of Be-doped GaAs/AlAs multiple quantum wells
Cechavicius, B
Kavaliauskas, J
Krivaite, G
Seliuta, D
Sirmulis, E
Devenson, J
Valusis, G
Sherliker, B
Halsall, MP
Steer, MJ
Harrison, P
ACTA PHYSICA POLONICA A, 2005, 107 (02) : 328 - 332
[29] Contactless electroreflectance investigation of energy levels in a 1.3 μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
Motyka, M.
Kudrawiec, R.
Sek, G.
Misiewicz, J.
Bisping, D.
Marquardt, B.
Forchel, A.
Fischer, M.
APPLIED PHYSICS LETTERS, 2007, 90 (22)
[30] Probing the indium clustering in InGaAsGaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy
Motyka, M.
Sȩk, G.
Kudrawiec, R.
Sitarek, P.
Misiewicz, J.
Wojcik, J.
Robinson, B.J.
Thompson, D.A.
Mascher, P.
Journal of Applied Physics, 2007, 101 (11):

← 1 2 3 4 5 →