Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

被引：2
|
作者：
Kudrawiec, R. [1 ]
Gladysiewicz, M. [1 ]
Misiewicz, J. [1 ]
Korpijarvi, V-M [2 ]
Pakarinen, J. [2 ,3 ]
Puustinen, J. [2 ]
Laukkanen, P. [2 ]
Laakso, A. [2 ]
Guina, M. [2 ]
Dumitrescu, M. [2 ]
Pessa, M. [2 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[3] VTT Tech Res Ctr Finland, Espoo 02044, Finland
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期
关键词：
LAYERS;
D O I：
10.1063/1.3462299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462299]
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页数：3
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