Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits

被引：5

作者：

Raskin, JP ^{[1
]}

Gilon, R

Dambrine, G

Chen, J

Vanhoenacker, D

Colinge, JP

机构：

[1] Univ Michigan, Radiat Lab, Ann Arbor, MI 48109 USA

[2] Alcatel Microelect, Oudenaande, Belgium

[3] Inst Electron & Microelectron Nord, Villeneuve Dascq, France

[4] Motorola Inc, Austin, TX USA

[5] Univ Catholique Louvain, Lab Hyperfrequences, B-1348 Louvain, Belgium

[6] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2000年 / 25卷 / 02期

关键词：

integrated circuit measurements; microwave measurements; MOSFETs; scattering parameters measurements; silicon-on-insulator technology;

D O I：

10.1023/A:1008380615900

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.

引用

页码：133 / 155

页数：23

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