The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures

被引：80

作者：

Seravalli, L ^{[1
]}

Minelli, M ^{[1
]}

Frigeri, P ^{[1
]}

Allegri, P ^{[1
]}

Avanzini, V ^{[1
]}

Franchi, S ^{[1
]}

机构：

[1] CNR, IMEM, I-43100 Parma, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared by molecular-beam epitaxy and studied structures of InAs quantum dots embedded in InxGa1-xAs confining layers. The structures were designed so that the strain of quantum dots could be controlled independently of In composition of confining layers. In such a way, we single out the effect of strain in quantum dots on the energy of photoluminescence emission. We show that strain can be effectively used to tune the emission energy of quantum dots, and that room-temperature emission at 1.3 mum can be obtained. Our results suggest that by quantum-dot strain engineering, it will be possible to extend emission wavelength beyond 1.55 mum. (C) 2003 American Institute of Physics.

引用

页码：2341 / 2343

页数：3

共 50 条

[41] Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots
Vega-Macotela, L. G.
Polupan, G.
Shcherbyna, Ye.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1543 - 1545
[42] Multicolor InGaAs quantum-dot infrared photodetectors
Kim, SM
Harris, JS
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2538 - 2540
[43] A Photovoltaic InAs Quantum-Dot Infrared Photodetector
Tang Guang-Hua
Xu Bo
Jiang Li-Wen
Kong Jin-Xia
Kong Ning
Liang De-Chun
Liang Ping
Ye Xiao-Ling
Jin Peng
Liu Feng-Qi
Chen Yong-Hai
Wang Zhan-Guo
CHINESE PHYSICS LETTERS, 2010, 27 (04)
[44] InAs/GaAs Quantum-Dot Light Emitters Monolithically Grown on Si Substrates
Liao, M.
Chen, S.
Tang, M.
Wu, J.
Jiang, Q.
Seeds, A.
Liu, H.
QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIII, 2016, 9758
[45] Wannier-Stark Effect in InAs/GaAs Quantum-Dot Superlattice
Sobolev, M. M.
Vasil'ev, A. P.
Nevedomskii, V. N.
Gadzhiev, I. M.
Bakshaev, I. O.
Portnoi, E. L.
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
[46] The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
Trevisi, G.
Seravalli, L.
Frigeri, P.
Prezioso, M.
Rimada, J. C.
Gombia, E.
Mosca, R.
Nasi, L.
Bocchi, C.
Franchi, S.
MICROELECTRONICS JOURNAL, 2009, 40 (03) : 465 - 468
[47] Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures
Lee, W
Myoung, JM
Yoo, YH
Shin, H
SOLID STATE COMMUNICATIONS, 2004, 132 (02) : 135 - 140
[48] Spontaneous emission study on 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
Liu, C. Y.
Stubenrauch, M.
Bimberg, D.
NANOTECHNOLOGY, 2011, 22 (23)
[49] Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules
Lin, Hsuan
Wang, Sheng-Yun
Lin, Chia-Hsien
Chang, Wen-Hao
Cheng, Shun-Jen
Lee, Ming-Chih
Chen, Wen-Yen
Hsu, Tzu-Min
Hsieh, Tung-Po
Chyi, Jen-Inn
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 860 - +
[50] Precision tuning of InAs quantum dot emission wavelength by iterative laser annealing
Dubowski, Jan J.
Stanowski, Radoslaw
Dalacu, Dan
Poole, Philip J.
OPTICS AND LASER TECHNOLOGY, 2018, 103 : 382 - 386

← 1 2 3 4 5 →