The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures

被引：80

作者：

Seravalli, L ^{[1
]}

Minelli, M ^{[1
]}

Frigeri, P ^{[1
]}

Allegri, P ^{[1
]}

Avanzini, V ^{[1
]}

Franchi, S ^{[1
]}

机构：

[1] CNR, IMEM, I-43100 Parma, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared by molecular-beam epitaxy and studied structures of InAs quantum dots embedded in InxGa1-xAs confining layers. The structures were designed so that the strain of quantum dots could be controlled independently of In composition of confining layers. In such a way, we single out the effect of strain in quantum dots on the energy of photoluminescence emission. We show that strain can be effectively used to tune the emission energy of quantum dots, and that room-temperature emission at 1.3 mum can be obtained. Our results suggest that by quantum-dot strain engineering, it will be possible to extend emission wavelength beyond 1.55 mum. (C) 2003 American Institute of Physics.

引用

页码：2341 / 2343

页数：3

共 50 条

[31] Ostwald ripening of quantum-dot nanostructures
Vengrenovich, RD
Gudyma, YV
Yarema, SV
SEMICONDUCTORS, 2001, 35 (12) : 1378 - 1382
[32] InGaAs Quantum-Dot Micropillar Emitters: From Spontaneous Emission and Superradiance to Lasing
Chow, W. W.
Kreinberg, S.
Wolters, J.
Schneider, C.
Gies, C.
Jahnke, F.
Hoefling, S.
Kamp, M.
Reitzenstein, S.
2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2017,
[33] Ostwald ripening of quantum-dot nanostructures
R. D. Vengrenovich
Yu. V. Gudyma
S. V. Yarema
Semiconductors, 2001, 35 : 1378 - 1382
[34] Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates
Thet, C. C.
Panyakeow, S.
Kanjanachuchai, S.
MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1562 - 1565
[35] Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs
Piskorski, Lukasz
Wasiak, Michal
Sarzala, Robert P.
Nakwaski, Wlodzimierz
OPTICS COMMUNICATIONS, 2008, 281 (11) : 3163 - 3170
[36] Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
Kryzhanovskaya, N. V.
Zhukov, A. E.
Nadtochy, A. M.
Maximov, M. V.
Moiseev, E. I.
Kulagina, M. M.
Savelev, A. V.
Arakcheeva, E. M.
Lipovskii, A. A.
Zubov, F. I.
Kapsalis, A.
Mesaritakis, C.
Syvridis, D.
Mintairov, A.
Livshits, D.
SEMICONDUCTORS, 2013, 47 (10) : 1387 - 1390
[37] Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
N. V. Kryzhanovskaya
A. E. Zhukov
A. M. Nadtochy
M. V. Maximov
E. I. Moiseev
M. M. Kulagina
A. V. Savelev
E. M. Arakcheeva
A. A. Lipovskii
F. I. Zubov
A. Kapsalis
C. Mesaritakis
D. Syvridis
A. Mintairov
D. Livshits
Semiconductors, 2013, 47 : 1387 - 1390
[38] InAs Quantum-dot Intersubband Optical Amplifier
Lu, Xuejun
INFRARED SYSTEMS AND PHOTOELECTRONIC TECHNOLOGY III, 2008, 7055
[39] InGaAs-GaAs quantum-dot lasers
Technical Univ-Berlin, Berlin, Germany
IEEE J Sel Top Quantum Electron, 2 (196-205):
[40] InGaAs-GaAs quantum-dot lasers
Bimberg, D
Kirstaedter, N
Ledentsov, NN
Alferov, ZI
Kopev, PS
Ustinov, VM
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 196 - 205

← 1 2 3 4 5 →