Impact of technology scaling on RF CMOS

被引：6
|
作者：
Hassan, H [1 ]
Anis, M [1 ]
Elmasry, M [1 ]
机构：
[1] Univ Waterloo, VLSI Res Grp, Waterloo, ON N2L 3G1, Canada
来源：
IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/SOCC.2004.1362363
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties,, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CANS technologies have high prospects in the RF industry.
引用
收藏
页码：97 / 101
页数：5
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