Thermo-electro-mechanical simulations of gas sensors based on SOI membranes

被引：0

作者：

Lu, CC ^{[1
]}

Setiadi, D ^{[1
]}

Udrea, F ^{[1
]}

Milne, WI ^{[1
]}

Covington, JA ^{[1
]}

Gardner, JW ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

2000 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, TECHNICAL PROCEEDINGS | 2000年

关键词：

solid-state gas sensors; electro-thermal-mechanical simulations; SOI devices; multilayer membrane; and device optimization;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400degreesC). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.

引用

页码：297 / 300

页数：4

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