Modeling and characterization of the nMOS transistor stressed by hot-carrier injection

被引：0
|
作者：
Bouchakour, R [1 ]
Hardy, L [1 ]
Limbourg, I [1 ]
Jourdain, M [1 ]
机构：
[1] ECOLE NATL SUPER TELECOMMUN BRETAGNE,DEPT ELECT,URA CNRS 820,F-75634 PARIS 13,FRANCE
来源：
ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 4 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：440 / 443
页数：4
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