Anisotropic laplace refinement for three-dimensional oxidation simulation

被引：0

作者：

Wessner, W ^{[1
]}

Hollauer, C ^{[1
]}

Hössinger, A ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a computational method for three-dimensional tetrahedral mesh refinement according to the demands of oxidation simulation. The main focus lies on two major problems. First, the start-up condition of oxidation claims an initial mesh preparation which is done by the so called Laplace refinement, second the transient conversion of silicon (Si) to silicon dioxide (SiO2) forces a high spatial resolution in a small area around the material interface which shows the need of adaptive refinement on demand. More over our approach takes anisotropy into account to keep the amount of elements small compared to strict isotropic refinement.

引用

页码：165 / 168

页数：4

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