Structural features of Ga-rich GaAs(001) surfaces:: Scanning tunneling microscopy study -: art. no. 201303

被引：21
|
作者：
Kocán, P
Ohtake, A
Koguchi, N
机构：
[1] Charles Univ, Dept Elect & Vacuum Phys, Prague, Czech Republic
[2] NIMS, Tsukuba, Ibaraki 3050044, Japan
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.70.201303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the study of GaAs(001) reconstructed surfaces using scanning tunneling microscopy. None of the previously published structural models of (6x6) and (4x6) reconstructions can sufficiently describe our observations. In order to explain observed images, As atoms at faulted positions and surface Ga-As mixed dimers are proposed to be the elements included in the structural models. The mechanism of transition between c(8x2) and (6x6) structures via line-aligned defects of c(8x2) is also discussed.
引用
收藏
页码：201303 / 1
页数：4
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