SCANNING-TUNNELING-MICROSCOPY STUDY OF CLEANING PROCEDURES FOR SIGE(001) SURFACES

被引：0
|
作者：
JONES, DE
PELZ, JP
XIE, YH
SILVERMAN, PJ
FITZGERALD, EA
机构：
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[2] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
来源：
SURFACE SCIENCE | 1995年 / 341卷 / 1-2期
关键词：
SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; SILICON; SILICON-GERMANIUM; SURFACE SEGREGATION; SURFACE STRUCTURE; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultra-high vacuum scanning tunneling microscopy and depth profiling X-ray photoelectron spectroscopy were used to evaluate two methods for cleaning Si1-xGex(001) films using ex-situ surface oxidation followed by in-situ oxide desorption at temperatures less than or equal to 1025 degrees C. Dry ultra-violet ozone cleaning was found to be fast, simple, and highly effective for cleaning Si1-xGex(001) surfaces with a wide range of Ge content as well as standard Si(001) surfaces, consistently yielding lower surface particulate densities than a standard wet chemical cleaning technique.
引用
收藏
页码：L1005 / L1010
页数：6
相关论文
共 50 条
  • [1] SCANNING-TUNNELING-MICROSCOPY STUDY OF CDTE(001)
    SEEHOFER, L
    FALKENBERG, G
    JOHNSON, RL
    ETGENS, VH
    TATARENKO, S
    BRUN, D
    DAUDIN, B
    APPLIED PHYSICS LETTERS, 1995, 67 (12) : 1680 - 1682
  • [2] SCANNING-TUNNELING-MICROSCOPY OF SILICON SURFACES
    ELSWIJK, HB
    ANALYTICA CHIMICA ACTA, 1993, 283 (01) : 35 - 41
  • [3] INITIAL-STAGES OF SIGE EPITAXY ON SI(001) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    ORAL, A
    ELLIALTIOGLU, R
    SURFACE SCIENCE, 1995, 323 (03) : 295 - 303
  • [4] OBSERVATION OF GAAS (001) SURFACES AT HIGH-TEMPERATURES BY SCANNING-TUNNELING-MICROSCOPY
    YAMAGUCHI, H
    KASU, M
    SUEYOSHI, T
    SATO, T
    IWATSUKI, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 1064 - 1067
  • [5] SCANNING-TUNNELING-MICROSCOPY OF ARGON-ION BOMBARDED GAAS (001) SURFACES
    OHKOUCHI, S
    IKOMA, N
    TANAKA, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2030 - 2032
  • [6] STEP MOTION AND AS DESORPTION ON INAS(001) SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
    YAMAGUCHI, H
    HORIKOSHI, Y
    PHYSICAL REVIEW B, 1993, 48 (04): : 2807 - 2810
  • [7] Scanning tunneling microscopy study of GaAs(001) surfaces
    Xue, QK
    Hashizume, T
    Sakurai, T
    APPLIED SURFACE SCIENCE, 1999, 141 (3-4) : 244 - 263
  • [8] SCANNING-TUNNELING-MICROSCOPY OF RF OSCILLATING SURFACES
    CHILLA, E
    ROHRBECK, W
    FROHLICH, HJ
    KOCH, R
    RIEDER, KH
    ANNALEN DER PHYSIK, 1994, 3 (01) : 21 - 27
  • [9] SCANNING-TUNNELING-MICROSCOPY OF POROUS SILICON SURFACES
    AMISOLA, GB
    BEHRENSMEIER, R
    GALLIGAN, JM
    OTTER, FA
    NAMAVAR, F
    KALKORAN, NM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05): : 1788 - 1792
  • [10] GAAS INITIAL GROWTH ON INAS (001) VICINAL SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
    IKOMA, N
    OHKOUCHI, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 144 - 147
12345