SCANNING-TUNNELING-MICROSCOPY STUDY OF CLEANING PROCEDURES FOR SIGE(001) SURFACES

被引：0
|
作者：
JONES, DE
PELZ, JP
XIE, YH
SILVERMAN, PJ
FITZGERALD, EA
机构：
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[2] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
来源：
SURFACE SCIENCE | 1995年 / 341卷 / 1-2期
关键词：
SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; SILICON; SILICON-GERMANIUM; SURFACE SEGREGATION; SURFACE STRUCTURE; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultra-high vacuum scanning tunneling microscopy and depth profiling X-ray photoelectron spectroscopy were used to evaluate two methods for cleaning Si1-xGex(001) films using ex-situ surface oxidation followed by in-situ oxide desorption at temperatures less than or equal to 1025 degrees C. Dry ultra-violet ozone cleaning was found to be fast, simple, and highly effective for cleaning Si1-xGex(001) surfaces with a wide range of Ge content as well as standard Si(001) surfaces, consistently yielding lower surface particulate densities than a standard wet chemical cleaning technique.
引用
收藏
页码：L1005 / L1010
页数：6
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