共 44 条
Performance Comparison of Cross-Like Hall Plates with Different Covering Layers
被引:15
|作者:
Lyu, Fei
[1
]
Zhang, Zhenyan
[1
]
Toh, Eng-Huat
[2
]
Liu, Xinfu
[2
]
Ding, Yinjie
[2
]
Pan, Yifan
[3
]
Li, Chengjie
[1
]
Li, Li
[1
]
Sha, Jin
[1
]
Pan, Hongbing
[1
]
机构:
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] GLOBALFOUNDRIES Singapore, Singapore 738406, Singapore
[3] Nanjing Foreign Language Sch, Nanjing 210008, Peoples R China
来源:
基金:
高等学校博士学科点专项科研基金;
关键词:
cross-like Hall plate;
sensitivity;
offset;
P-type covering layer;
OFFSET REDUCTION;
DEVICES;
SENSOR;
SILICON;
MODEL;
D O I:
10.3390/s150100672
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are characterized using a self-built measurement system. The effect of the P-type region over the active area on the current-related sensitivity is studied for different Hall plate designs. In addition, the correlation between the P-type covering layer and offset is analyzed. The best structure out of three designs is determined. Besides, a modified eight-resistor circuit model for the Hall plate is presented with improved accuracy by taking the offset into account.
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页码:672 / 686
页数:15
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