Performance Comparison of Cross-Like Hall Plates with Different Covering Layers

被引：15

作者：

Lyu, Fei ^{[1
]}

Zhang, Zhenyan ^{[1
]}

Toh, Eng-Huat ^{[2
]}

Liu, Xinfu ^{[2
]}

Ding, Yinjie ^{[2
]}

Pan, Yifan ^{[3
]}

Li, Chengjie ^{[1
]}

Li, Li ^{[1
]}

Sha, Jin ^{[1
]}

Pan, Hongbing ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] GLOBALFOUNDRIES Singapore, Singapore 738406, Singapore

[3] Nanjing Foreign Language Sch, Nanjing 210008, Peoples R China

来源：

SENSORS | 2015年 / 15卷 / 01期

基金：

高等学校博士学科点专项科研基金;

关键词：

cross-like Hall plate; sensitivity; offset; P-type covering layer; OFFSET REDUCTION; DEVICES; SENSOR; SILICON; MODEL;

D O I：

10.3390/s150100672

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are characterized using a self-built measurement system. The effect of the P-type region over the active area on the current-related sensitivity is studied for different Hall plate designs. In addition, the correlation between the P-type covering layer and offset is analyzed. The best structure out of three designs is determined. Besides, a modified eight-resistor circuit model for the Hall plate is presented with improved accuracy by taking the offset into account.

引用

页码：672 / 686

页数：15

共 44 条

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