Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures

被引：3
|
作者：
Liu, XQ [1 ]
Li, N
Li, ZF
Lu, W
Shen, SC
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Zou, J
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Univ Gothenburg, Dept Phys, Lab Phys Elect & Photon, S-41296 Gothenburg, Sweden
[3] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
[4] Australian Natl Univ, Res Sch Phys Sci, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[5] Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia
[6] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9A期
关键词：
GaAs/AlGaAs quantum wires; infrared photodetector; micro-photoluminescence; photocurrent;
D O I：
10.1143/JJAP.39.5124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An Al0.5Ga0.5As/GaAs quantum wires infrared photo-detectors (QWRIP) based on V-grooved substrate is fabricated. The inter-band transition in the quantum wires is characterized by spatially resolved micro-photoluminescence (micro-PL) measurement. The theoretical calculation of electronic structures is accomplished based on the Green function. The inter-subband transition is measured by photocurrent at 80 K, and the origin of the infrared response at 9 mu m is from the inter-subband transition in quantum wire region, which is confirmed by the theoretical calculation results.
引用
收藏
页码：5124 / 5127
页数：4
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