Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures

被引：3

作者：

Liu, XQ ^{[1
]}

Li, N

Li, ZF

Lu, W

Shen, SC

Fu, Y

Willander, M

Tan, HH

Jagadish, C

Zou, J

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Univ Gothenburg, Dept Phys, Lab Phys Elect & Photon, S-41296 Gothenburg, Sweden

[3] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

[4] Australian Natl Univ, Res Sch Phys Sci, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[5] Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia

[6] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9A期

关键词：

GaAs/AlGaAs quantum wires; infrared photodetector; micro-photoluminescence; photocurrent;

D O I：

10.1143/JJAP.39.5124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An Al0.5Ga0.5As/GaAs quantum wires infrared photo-detectors (QWRIP) based on V-grooved substrate is fabricated. The inter-band transition in the quantum wires is characterized by spatially resolved micro-photoluminescence (micro-PL) measurement. The theoretical calculation of electronic structures is accomplished based on the Green function. The inter-subband transition is measured by photocurrent at 80 K, and the origin of the infrared response at 9 mu m is from the inter-subband transition in quantum wire region, which is confirmed by the theoretical calculation results.

引用

页码：5124 / 5127

页数：4

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