Hot-Wire Chemical Vapour Deposition for Silicon Nitride Waveguides

被引：1

作者：

Bucio, T. Dominguez ^{[1
]}

Tarazona, A. ^{[1
]}

Khokhar, A. Z. ^{[1
]}

Mashanovich, G. Z. ^{[1
]}

Gardes, F. Y. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Highfield Campus, Southampton SO17 1BJ, Hants, England

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 | 2016年 / 72卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1149/07204.0269ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, we demonstrate the use of hot-wire chemical vapour deposition (HWCVD) as an alternative technique to grow SiN layers for photonic waveguides at temperatures <400 degrees C. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4x10 21 atoms/cm(3) were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively.

引用

页码：269 / 272

页数：4

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