Influence of self-assembled monolayer binding group on graphene transistors

被引：12

作者：

Cernetic, Nathan ^{[1
]}

Hutchins, Daniel O. ^{[1
]}

Ma, Hong ^{[1
]}

Jen, Alex K. -Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; PERFORMANCE; SCATTERING;

D O I：

10.1063/1.4905595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene transistors, while phosphonic acid based ones caused n-type doping of graphene transistors with a charge neutrality point shift of over 10 V. It was also discovered that alkyl SAM packing density influenced the doping magnitude. Due to substrate surface charge trap quenching, these SAMs independent of binding group enhanced charge mobility of graphene transistors compared to ones on bare oxide substrates. (C) 2015 AIP Publishing LLC.

引用

页数：4

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