Influence of self-assembled monolayer binding group on graphene transistors

被引：12
|
作者：
Cernetic, Nathan [1 ]
Hutchins, Daniel O. [1 ]
Ma, Hong [1 ]
Jen, Alex K. -Y. [1 ,2 ]
机构：
[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期
基金：
美国国家科学基金会;
关键词：
FIELD-EFFECT TRANSISTORS; PERFORMANCE; SCATTERING;
D O I：
10.1063/1.4905595
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene transistors, while phosphonic acid based ones caused n-type doping of graphene transistors with a charge neutrality point shift of over 10 V. It was also discovered that alkyl SAM packing density influenced the doping magnitude. Due to substrate surface charge trap quenching, these SAMs independent of binding group enhanced charge mobility of graphene transistors compared to ones on bare oxide substrates. (C) 2015 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Influence of a self-assembled monolayer on indium-zinc-oxide semiconductor thin-film transistors
    Yong Suk Yang
    In-Kyu You
    Sung-Hoon Hong
    Ju-hyeon Park
    Ho-Gyeong Yun
    Young Hun Kang
    Changjin Lee
    Song Yun Cho
    Journal of the Korean Physical Society, 2014, 65 : 1555 - 1558
  • [22] Influence of a self-assembled monolayer on indium-zinc-oxide semiconductor thin-film transistors
    Yang, Yong Suk
    You, In-Kyu
    Hong, Sung-Hoon
    Park, Ju-hyeon
    Yun, Ho-Gyeong
    Kang, Young Hun
    Lee, Changjin
    Cho, Song Yun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (10) : 1555 - 1558
  • [23] Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors
    Tanaka, Takahisa
    Yajima, Takeaki
    Uchida, Ken
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
  • [24] Self-assembled monolayer transistors (Retraction of vol 14, pg 232, 2002)
    Schön, JH
    Meng, H
    Bao, Z
    ADVANCED MATERIALS, 2003, 15 (06) : 478 - 478
  • [25] Retraction Note to: Self-assembled monolayer organic field-effect transistors
    Jan Hendrik Schön
    Hong Meng
    Zhenan Bao
    Nature, 2003, 422 : 92 - 92
  • [26] Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors
    Zhao, Baolin
    Gothe, Bastian
    Groh, Arthur
    Schmaltz, Thomas
    Will, Johannes
    Steinrueck, Hans-Georg
    Unruh, Tobias
    Mecking, Stefan
    Halik, Marcus
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (27) : 32461 - 32466
  • [27] N-type self-assembled monolayer field-effect transistors
    Ringk, Andreas
    Li, Xiaoran
    Gholamrezaie, Fatemeh
    Smits, Edsger C. P.
    Neuhold, Alfred
    Moser, Armin
    Gelinck, Gerwin H.
    Resel, Roland
    de Leeuw, Dago M.
    Strohriegl, Peter
    ORGANIC FIELD-EFFECT TRANSISTORS XI, 2012, 8478
  • [28] Scalable self-assembled reduced graphene oxide transistors on flexible substrate
    Wang, Zhenxing
    Eigler, Siegfried
    Halik, Marcus
    APPLIED PHYSICS LETTERS, 2014, 104 (24)
  • [29] Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors
    Hill, I. G.
    Weinert, C. M.
    Kreplak, L.
    van Zyl, B. P.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01): : 81 - 87
  • [30] Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors
    I. G. Hill
    C. M. Weinert
    L. Kreplak
    B. P. van Zyl
    Applied Physics A, 2009, 95 : 81 - 87
12345