Structure of pentacene thin films

被引:161
|
作者
Ruiz, R [1 ]
Mayer, AC
Malliaras, GG
Nickel, B
Scoles, G
Kazimirov, A
Kim, H
Headrick, RL
Islam, Z
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[3] Princeton Mat Inst, Princeton, NJ 08544 USA
[4] Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
[5] Sogang Univ, Dept Phys, Seoul 121742, South Korea
[6] Univ Vermont, Dept Phys, Burlington, VT 05405 USA
[7] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1826229
中图分类号
O59 [应用物理学];
学科分类号
摘要
Grazing incidence x-ray diffraction, x-ray reflectivity and atomic force microscopy have been performed to study the structure of pentacene thin films on oxidized Si substrates from submonolayer to multilayer coverages. The volume of the unit cell in the thin film phase is almost identical to that of the bulk phase, thus the molecular packing efficiency is effectively the same in both phases. The structure forming from the first monolayer remains the same for films at least 190 Angstrom thick. The in-plane structure of the submonolayer islands also remains unchanged within a substrate temperature range of 0<T-sub<45 degreesC while the island size changes by more than a factor of 4. (C) 2004 American Institute of Physics.
引用
收藏
页码:4926 / 4928
页数:3
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