Terahertz spectroscopy on hole transport in pentacene thin films

被引：14
|
作者：
Engelbrecht, S. G. [1 ]
Prinz, M.
Arend, T. R.
Kersting, R.
机构：
[1] Univ Munich, Photon & Optoelect Grp, Dept Phys, D-80799 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 01期
关键词：
ELECTRICAL CHARACTERISTICS; TRANSISTORS; PERFORMANCE; MORPHOLOGY; MOBILITY; LAYERS; TIME;
D O I：
10.1063/1.4887237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Charge transport in pentacene thin films is investigated using terahertz electromodulation spectroscopy. Although the material is highly polycrystalline, a hole mobility of about 20 cm(2)/Vs is found, which exceeds the mobility obtained in DC measurements by orders of magnitude. The high AC mobility results from a motion of charge carriers, which is not hindered by grain boundaries. An upper limit of m(h)* approximate to 0.8 m(e) is deduced for the conductivity effective mass of holes in pentacene. (C) 2014 AIP Publishing LLC.
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页数：4
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