Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

被引：9

作者：

Huang, Huan ^{[1
]}

Zuo, Fangyuan ^{[2
]}

Zhai, Fengxiao ^{[1
]}

Wang, Yang ^{[1
]}

Lai, Tianshu ^{[2
]}

Wu, Yiqun ^{[1
]}

Gan, Fuxi ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China

[2] Sun Yet Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 17期

基金：

中国国家自然科学基金;

关键词：

PHASE-CHANGE; CRYSTAL NUCLEATION; OPTICAL DISK; TEMPERATURE; TRANSITIONS; DENSITY;

D O I：

10.1088/0022-3727/43/17/175401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-resolved crystallization dynamics of as-deposited amorphous AgInSbTe thin films induced by single picosecond laser pulses has been studied. The crystallization process was shown to be a threshold-dependent multi-stage process. For the same film structure, the total crystallization time does not change significantly with different fluences in a broad fluence range. The total crystallization time can be effectively shortened by an additional thermally conductive silver underlayer. After the film has been primed with a low-fluence single similar to 30 ps laser pulse, the crystallization process can be simplified to be a monotonic process with a markedly reduced crystallization time.

引用

页数：6

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