Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

被引：9
|
作者：
Huang, Huan [1 ]
Zuo, Fangyuan [2 ]
Zhai, Fengxiao [1 ]
Wang, Yang [1 ]
Lai, Tianshu [2 ]
Wu, Yiqun [1 ]
Gan, Fuxi [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China
[2] Sun Yet Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 17期
基金：
中国国家自然科学基金;
关键词：
PHASE-CHANGE; CRYSTAL NUCLEATION; OPTICAL DISK; TEMPERATURE; TRANSITIONS; DENSITY;
D O I：
10.1088/0022-3727/43/17/175401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time-resolved crystallization dynamics of as-deposited amorphous AgInSbTe thin films induced by single picosecond laser pulses has been studied. The crystallization process was shown to be a threshold-dependent multi-stage process. For the same film structure, the total crystallization time does not change significantly with different fluences in a broad fluence range. The total crystallization time can be effectively shortened by an additional thermally conductive silver underlayer. After the film has been primed with a low-fluence single similar to 30 ps laser pulse, the crystallization process can be simplified to be a monotonic process with a markedly reduced crystallization time.
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页数：6
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