The use of pulse processing techniques to improve the performance of Cd1-xZnxTe gamma-ray spectrometers

被引：0
|
作者：
Lund, JC [1 ]
Olsen, R [1 ]
VanScyoc, JM [1 ]
James, RB [1 ]
机构：
[1] SANDIA NATL LABS,LIVERMORE,CA 94551
来源：
1995 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD, VOLS 1-3 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：126 / 130
页数：5
相关论文
共 50 条
  • [21] Gamma-stimulated change of the photoluminescence properties of Cd1-xZnxTe thin films
    Nasieka, Iu
    Rashkovetskyi, L.
    Strilchuk, O.
    Danilchenko, B.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 648 (01): : 290 - 292
  • [22] Photoresponse and X-ray response of Cd1-xZnxTe thick polycrystalline films
    Znamenshchykov, Yaroslav
    Volobuev, Vladislav
    Kurbatov, Denys
    Kolesnyk, Maksym
    Nekrasov, Sergiy
    Opanasyuk, Anatoliy
    2020 IEEE KHPI WEEK ON ADVANCED TECHNOLOGY (KHPI WEEK), 2020, : 253 - 256
  • [23] Cd1-xZnxTe crystals for gamma detectors:: Evaluation of quality from photoconductivity measurements
    Gerasimenko, AS
    Komar, VK
    Migal, VP
    Nalivaiko, DP
    Oleinik, SV
    Sulima, SV
    Chugai, ON
    INORGANIC MATERIALS, 2005, 41 (03) : 229 - 231
  • [24] Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers by Raman, photoluminescence and X-ray diffraction techniques
    Levy, M
    Amir, N
    Khanin, E
    Muranevich, A
    Nemirovsky, Y
    Beserman, R
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) : 367 - 372
  • [25] Detection characterization of Cd1-xZnxTe detectors for x-ray linear arrays
    Giakos, GC
    Vedantham, S
    Suryanarayanan, S
    Chowdhury, S
    Guntupalli, R
    Odogba, J
    Dasgupta, A
    Pillai, B
    Endorf, RJ
    PHYSICS OF MEDICAL IMAGING, 1998, 3336 : 537 - 545
  • [26] X-ray irradiation effects on the trapping properties of Cd1-xZnxTe detectors
    Fraboni, B.
    Pasquini, L.
    Castaldini, A.
    Cavallini, A.
    Siffert, P.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)
  • [27] X-ray detection properties of polycrystalline Cd1-xZnxTe detectors for digital radiography
    Kang, SS
    Park, JK
    Lee, DG
    Mun, CW
    Kim, JH
    Nam, SH
    MEDICAL IMAGING 2003: PHYSICS OF MEDICAL IMAGING, PTS 1 AND 2, 2003, 5030 : 853 - 860
  • [28] Structural characterization of epitaxial Cd1-xZnxTe semiconductor thin films by ion beam techniques
    Fernández-Lima, F
    Larramendi, EM
    Purón, E
    Pedrero, E
    de Melo, O
    Baptista, DL
    Zawislak, FC
    JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 89 - 94
  • [29] Investigation of the effects of polishing and etching on the quality of Cd1-xZnxTe using spatial mapping techniques
    Yoon, H
    VanScyoc, JM
    Goorsky, MS
    Hermon, H
    Schieber, M
    Lund, JC
    James, RB
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 529 - 533
  • [30] X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1-xZnxTe
    Pashaev E.M.
    Peregudov V.N.
    Yakunin S.N.
    Zaitsev A.A.
    Kolesnikova T.G.
    Korovin A.P.
    Russian Microelectronics, 2002, 31 (5) : 271 - 276
12345