Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

被引：0

作者：

Chandola, A ^{[1
]}

Ko, Y ^{[1
]}

Dutta, PS ^{[1
]}

Zakel, A ^{[1
]}

Gonzalez, L ^{[1
]}

Hall, A ^{[1
]}

Henry, J ^{[1
]}

Gillen, GD ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY USA

来源：

2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ISCSPC.2003.1354432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical Bridgman grown bulk crystals of antimonides (e.g. InSb, GaSb & InGaSb) doped with isoelectronic dopants exhibited significant reduction in free-carrier absorption. The enhancement in below band gap optical transmission and reduction in residual doping concentration are attributed to reduction or compensation of native defects.

引用

页码：61 / 65

页数：5

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