Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

被引：0

作者：

Chandola, A ^{[1
]}

Ko, Y ^{[1
]}

Dutta, PS ^{[1
]}

Zakel, A ^{[1
]}

Gonzalez, L ^{[1
]}

Hall, A ^{[1
]}

Henry, J ^{[1
]}

Gillen, GD ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY USA

来源：

2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ISCSPC.2003.1354432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical Bridgman grown bulk crystals of antimonides (e.g. InSb, GaSb & InGaSb) doped with isoelectronic dopants exhibited significant reduction in free-carrier absorption. The enhancement in below band gap optical transmission and reduction in residual doping concentration are attributed to reduction or compensation of native defects.

引用

页码：61 / 65

页数：5

共 50 条

[11] Optical properties and characterization of SiC and III-V nitrides
Choyke, WJ
Devaty, RP
Clemen, LL
MacMillan, MF
Yoganathan, M
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 257 - 262
[12] Electrical and optical properties of III-V microdisk based LASERs fabricated on a CMOS pilot line
Mandorlo, Fabien
Rojo-Romeo, Pedro
Letartre, Xavier
Fedeli, Jean-Marc
Orobtchouk, Regis
Grenouillet, Laurent
Regreny, Philippe
Viktorovitch, Pierre
Sohrab, Hossain M. D.
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2010, : 25 - 27
[13] Modeling the optical and electrical response of nanostructured III-V solar cells
Driscoll, Kristina
Hubbard, Seth
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 2985 - 2989
[14] Optical properties of random III-V ternary semiconducting alloys
Ganguli, B
Mookerjee, A
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (24): : 3681 - 3695
[15] OPTICAL PROPERTIES OF LEAD-SALT AND III-V SEMICONDUCTORS
STERN, F
JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2166 - +
[16] Synthesis and optical properties of multiband III-V semiconductor alloys
Yu, K. M.
Walukiewicz, W.
Farshchi, R.
Dubon, O. D.
Ager, J. W., III
Sharp, I. D.
Haller, E. E.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1477 - +
[17] OPTICAL INVESTIGATIONS OF SURFACE AND INTERFACE PROPERTIES AT III-V SEMICONDUCTORS
SCHREIBER, J
HILDEBRANDT, S
KIRCHER, W
RICHTER, T
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 31 - 35
[18] Optical and Structural Properties of Emerging Dilute III-V Bismides
Bononi dos Santos, B. H.
Galvao Gobato, Y.
Henini, M.
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2014, 23 (05): : 211 - 220
[19] Electrical properties of sulfur-passivated III-V compound devices
Eftekhari, G
VACUUM, 2002, 67 (01) : 81 - 90
[20] Electrical characterization of dopants and deep level defects for III-V nitrides grown by metalorganic chemical vapor deposition
Gotz, W
Johnson, NM
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1375 - 1380

← 1 2 3 4 5 →