Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

被引：0
|
作者：
Chandola, A [1 ]
Ko, Y [1 ]
Dutta, PS [1 ]
Zakel, A [1 ]
Gonzalez, L [1 ]
Hall, A [1 ]
Henry, J [1 ]
Gillen, GD [1 ]
Guha, S [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY USA
来源：
2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/ISCSPC.2003.1354432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical Bridgman grown bulk crystals of antimonides (e.g. InSb, GaSb & InGaSb) doped with isoelectronic dopants exhibited significant reduction in free-carrier absorption. The enhancement in below band gap optical transmission and reduction in residual doping concentration are attributed to reduction or compensation of native defects.
引用
收藏
页码：61 / 65
页数：5
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