Fabrication of Diamond/Cu Direct Bonding for Power Device Application

被引：0
|
作者：
Kanda, Shinji [1 ]
Masuya, Satoshi [2 ]
Kasu, Makoto [2 ]
Shigekawa, Naoteru [1 ]
Liang, Jianbo [1 ]
机构：
[1] Osaka City Univ, Grad Sch Engn, Sumiyoshi Ku, 3-3-138 Sugimoto, Osaka 5588585, Japan
[2] Saga Univ, Dept Elect & Elect Engn, 1 Honjo Machi, Saga 8408502, Japan
来源：
PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2019年
关键词：
D O I：
10.23919/ltb-3d.2019.8735136
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Direct bonding of diamond and Cu is successfully fabricated by surface activated bonding method. An almost full contact area of diamond and Cu is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).
引用
收藏
页码：57 / 57
页数：1
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