VFTLP Characteristics of ESD Protection Diodes in Advanced Bulk FinFET Technology

被引：0
|
作者：
Chen, Shih-Hung [1 ]
Linten, Dimitri [1 ]
Scholz, Mirko [1 ]
Hellings, Geert [1 ]
Boschke, Roman [2 ]
Groeseneken, Guido [2 ]
Thean, Aaron [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, B-3000 Leuven, Belgium
来源：
2015 37TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD) | 2015年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Beyond 20nm nodes, bulk FinFET is the mainstream technology; however, new process options can result in significant impacts on intrinsic ESD performance. In this work, we study on vfTLP characteristics of two types of ESD diodes. The corresponding TCAD simulations bring an in-depth understanding on the physical mechanism of these ESD diodes.
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页数：6
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