Inspection and metrology challenges for 3 nm node devices and beyond

被引：3

作者：

Shohjoh, T. ^{[1
]}

Ikota, M. ^{[1
]}

Isawa, M. ^{[1
]}

Lorusso, G. F. ^{[2
]}

Horiguchi, N. ^{[2
]}

Briggs, B. ^{[2
]}

Mertens, H. ^{[2
]}

Bogdanowicz, J. ^{[2
]}

De Bisschop, P. ^{[2
]}

Charley, A-L ^{[2
]}

机构：

[1] Hitachi High Tech Corp, Hitachinaka, Ibaraki 3128504, Japan

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on non-destructive inspection and metrology potential of high-voltage (HV) critical dimension scanning electron microscopy (CD-SEM) for 3 nm node devices and beyond. We have demonstrated that the lateral recess depth of the buried SiGe layer can be measured by HV CD-SEM. We have simulated the SEM signal of the buried void in dielectric wall and buried SiGe residue of forksheet and have actually detected it by HV CD-SEM and verified it by EDX. We have also observed the buried voids on the boundary between 10 nm wide Ru line and TiN liner.

引用

页数：4

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