HVM Metrology Challenges towards the 5 nm Node

被引：36

作者：

Bunday, Benjamin ^{[1
]}

机构：

[1] SUNY Poly SEMATECH, Albany, NY 12203 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX | 2016年 / 9778卷

关键词：

metrology; gaps analysis; critical dimension; defect; films; CD-SEM; OCD; X-ray; EBI; CD-METROLOGY; DIELECTRIC-CONSTANT; BEAM INSPECTION; HIGH-ENERGY; MASK; MODEL; WAFER; ANGLE; TILT;

D O I：

10.1117/12.2218375

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper will provide a high level overview of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry. First, we will take a broad view of the needs of patterned defect, critical dimensional (CD/3D) and films metrology, and present the extensive list of applications for which metrology solutions are needed. Commonalities and differences among the various applications will be shown. We will then report on the gating technical limits of the most important of these metrology solutions to address the metrology challenges of future nodes, highlighting key metrology technology gaps requiring industry attention and investment.

引用

页数：34

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